PMV56XN,215

PMV56XN,215 datasheet

Маркировка

PMV56XN,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PMV56XN,215 Configuration: Single Continuous Drain Current: 3.76 A Current - Continuous Drain (id) @ 25?° C: 3.76A Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: 20 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 5.4nC @ 4.5V Gate-source Breakdown Voltage: +/- 8 V ID_COMPONENTS: 1951777 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 1.92W Power Dissipation: 1920 mW Rds On (max) @ Id, Vgs: 85 mOhm @ 3.6A, 4.5V Resistance Drain-source Rds (on): 0.085 Ohm @ 4.5 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 650mV @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 8 V Resistance Drain-Source RDS (on): 56 mOhms Fall Time: 34 ns Rise Time: 23 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 50 ns Part # Aliases: PMV56XN T/R Other Names: 934057732215::PMV56XN T/R::PMV56XN T/R
Количество страниц

12 шт.
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